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MITSUBISHI TRANSISTOR MODULES
QM15DX-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM15DX-2H
* * * * *
IC Collector current .......................... 15A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
92 80 5.5 B2 B1
(21)
B2 E CE
B1
0.8
C
10.5 10.5 10.5 10.5 Tab#250, t=0.8 8.0 8.35
1.65
3.4 7.95
35
E
CE
C
(4.5)
LABEL
19.5
30
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15DX-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso -- -- Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight
(Tj=25C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 15 15 150 1 150 -40~+150 -40~+125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value 2500 1.47~1.96 15~20 155 Unit V V V V A A W A A C C V N*m kg*cm g
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25C, unless otherwise noted)
Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=15A, IB=0.3A -IC=15A (diode forward voltage) IC=15A, VCE=2.8V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=600V, IC=15A, IB1=-IB2=0.3A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 100 2.5 3.5 1.5 -- 2.5 15 3.0 0.8 1.2 0.25 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15DX-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 50 Tj=25C COLLECTOR CURRENT IC (A) 40 DC CURRENT GAIN hFE 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 0 VCE=2.8V 2 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
30
IB=0.4A IB=0.2A IB=0.1A IB=0.06A
VCE=5.0V
20
10
IB=0.02A
0
Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A)
0
1
2
3
4
5 VCE (V)
COLLECTOR-EMITTER VOLTAGE
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.8 2.2 2.6 3.0 3.4 VBE (V) 3.8 VCE=2.8V Tj=25C
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2
BASE CURRENT IB (A)
VBE(sat)
SATURATION VOLTAGE
10 0 VCE(sat) 7 5 4 3 IB=0.3A 2 Tj=25C Tj=125C -1 10 0 10 2 3 4 5 7 10 1
2 3 4 5 7 10 2
BASE-EMITTER VOLTAGE
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 ton, ts, tf (s) 2 10 1 7 5 4 3 2
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
4
ts
3
2 IC=10A IC=15A 1 IC=5A Tj=25C Tj=125C 0 3 4 5 7 10 -2 2 3 4 5 7 10 -1 23
SWITCHING TIME
10 0 7 5 4 3 2 10 0
tf ton Tj=25C Tj=125C VCC=600V IB1=-IB2=0.3A 2 3 4 5 7 10 2 IC (A)
2 3 4 5 7 10 1
BASE CURRENT IB (A)
COLLECTOR CURRENT
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15DX-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 2 ts, tf (s) 10 1 7 5 4 3 2 10 0 7 5 4 3
REVERSE BIAS SAFE OPERATING AREA 40 COLLECTOR CURRENT IC (A)
ts
IB2=-0.5A 30
SWITCHING TIME
IB2=1A 20
tf VCC=600V IB1=0.3A IC=15A Tj=25C Tj=125C 3 4 5 7 10 -1 2 3 4 5 7 10 0 23
10 Tj=125C 0 0 200 400 600 800 1000 VCE (V)
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 10 1 7 5 3 2
D C
DERATING FACTOR OF F. B. S. O. A. 100
COLLECTOR CURRENT IC (A)
200s
1m s
100s DERATING FACTOR (%)
500
90 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION
SECOND BREAKDOWN AREA
10 0 7 5 3 2 TC=25C NON-REPETITIVE 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR REVERSE CURRENT -IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 2 3 4 5 1.0
s
80 100 120 140 160 TC (C)
CASE TEMPERATURE
0.8 Zth (j-c) (C/ W)
0.6
10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C
0.4
0.2 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s)
0
0.4
0.8
1.2
1.6
2.0
COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15DX-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A)
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL)
200 180 160 140 120 100 80 60 40 20 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2
Irr (A), Qrr (c)
10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10 0 Irr
10 1 VCC=600V IB1=-IB2=0.3A
10 0
trr Qrr 2 3 4 5 7 10 1
10 -1 2 3 4 5 7 10 2
Tj=25C Tj=125C
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE ) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 2.0
1.6
Zth (j-c) (C/ W)
1.2
0.8
0.4 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0
TIME (s)
Feb.1999
trr (s)

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